SUP60N06-12P-GE3 VISHAY SILICONIX Mosfet, Power;60V;60A;Power,100W;R(ds)

Part Nnumber
SUP60N06-12P-GE3
Description
Mosfet, Power;60V;60A;Power,100W;R(ds)
Producer
VISHAY SILICONIX
Basic price
1,03 EUR

The product with part number SUP60N06-12P-GE3 (Mosfet, Power;60V;60A;Power,100W;R(ds)) is from company VISHAY SILICONIX and distributed with basic unit price 1,03 EUR. Minimal order quantity is 1 pc.


CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.51 x 4.65 x 15.49mm Height15.49mm Length10.51mm Maximum Continuous Drain Current60 A Maximum Drain Source Resistance0.019 Ω Maximum Drain Source Voltage60 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation100 W Minimum Operating Temperature-55 °C Number of Elements per Chip1 Package TypeTO-220AB Pin Count3 Typical Gate Charge @ Vgs33 nC@ 10 V Typical Input Capacitance @ Vds1970 pF@ 30 V Typical Turn-Off Delay Time16 ns Typical Turn-On Delay Time11 ns Width4.65mm Product Details N-Channel MOSFET, TrenchFET® Gen IV, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor


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