SI4463BDY-T1-E3 VISHAY SILICONIX MOSFET, P, SOIC

Part Nnumber
SI4463BDY-T1-E3
Description
MOSFET, P, SOIC
Producer
VISHAY SILICONIX
Basic price
11,17 EUR

The product with part number SI4463BDY-T1-E3 (MOSFET, P, SOIC) is from company VISHAY SILICONIX and distributed with basic unit price 11,17 EUR. Minimal order quantity is 1 pc, Approx. production time is 44 weeks, Weight is 0.0009 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 9.8A Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.11ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.5W Rds(on) Test Voltage Vgs: 12V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -1.4V Transistor Case Style: SOIC Transistor Polarity: P Channel


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