SI2319CDS-T1-GE3 VISHAY SILICONIX MOSFET,P CH,40V,4.4A,DIODE,SOT23

Part Nnumber
SI2319CDS-T1-GE3
Description
MOSFET,P CH,40V,4.4A,DIODE,SOT23
Producer
VISHAY SILICONIX
Basic price
13,41 EUR

The product with part number SI2319CDS-T1-GE3 (MOSFET,P CH,40V,4.4A,DIODE,SOT23) is from company VISHAY SILICONIX and distributed with basic unit price 13,41 EUR. Minimal order quantity is 150 pc, Approx. production time is 14 weeks, Weight is 0.0000 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: -4.4A Drain Source Voltage Vds: -40V MSL: - No. of Pins: 3 On Resistance Rds(on): 0.064ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.25W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -1.2V Transistor Case Style: SOT-23 Transistor Polarity: P Channel


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875530911Molex10,33 EUR
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889944000Molex17,33 EUR
89001160Molex15,33 EUR
894010810Molex5,33 EUR
901430106Molex7,33 EUR
SI2343CDS-T1-GE3VISHAY SILICONIX9,36 EUR

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