SI2369DS-T1-GE3 VISHAY SILICONIX MOSFET, P CH, -30V, -7.6A, SOT-23-3

Part Nnumber
SI2369DS-T1-GE3
Description
MOSFET, P CH, -30V, -7.6A, SOT-23-3
Producer
VISHAY SILICONIX
Basic price
9,25 EUR

The product with part number SI2369DS-T1-GE3 (MOSFET, P CH, -30V, -7.6A, SOT-23-3) is from company VISHAY SILICONIX and distributed with basic unit price 9,25 EUR. Minimal order quantity is 1 pc, Approx. production time is 21 weeks, Weight is 0.0000 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: -7.6A Drain Source Voltage Vds: -30V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.024ohm Operating Temperature Max: 150°C Power Dissipation Pd: 2.5W Rds(on) Test Voltage Vgs: -10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: - Transistor Case Style: SOT-23 Transistor Polarity: P Channel


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