SQD45P03-12_GE3 VISHAY SILICONIX MOSFET P-CH 30V 50A TO252 P-Channel 30V 50A (Tc) 71W (Tc) Surface Mount

Part Nnumber
SQD45P03-12_GE3
Description
MOSFET P-CH 30V 50A TO252 P-Channel 30V 50A (Tc) 71W (Tc) Surface Mount
Producer
VISHAY SILICONIX
Basic price
1,71 EUR

The product with part number SQD45P03-12_GE3 (MOSFET P-CH 30V 50A TO252 P-Channel 30V 50A (Tc) 71W (Tc) Surface Mount) is from company VISHAY SILICONIX and distributed with basic unit price 1,71 EUR. Minimal order quantity is 1 pc, Approx. production time is 91 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 3495pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 71W (Tc) Rds On (Max) @ Id, Vgs 10 mOhm @ 15A, 10V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63


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