SI5853DDC-T1-E3 VISHAY SILICONIX MOSFET P-CH 20V 4A 1206-8 P-Channel 20V 4A (Tc) 1.3W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™

Part Nnumber

SI5853DDC-T1-E3

Description

MOSFET P-CH 20V 4A 1206-8 P-Channel 20V 4A (Tc) 1.3W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™

Producer

VISHAY SILICONIX

Basic price

0,48 EUR

The product with part number SI5853DDC-T1-E3 (MOSFET P-CH 20V 4A 1206-8 P-Channel 20V 4A (Tc) 1.3W (Ta), 3.1W (Tc) Surface Mount 1206-8 ChipFET™) is from company VISHAY SILICONIX and distributed with basic unit price 0,48 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.

Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 320pF @ 10V Vgs (Max) ±8V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.3W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs 105 mOhm @ 2.9A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead

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