SI5855CDC-T1-E3 VISHAY SILICONIX MOSFET P-CH 20V 3.7A 1206-8 P-Channel 20V 3.7A (Tc) 1.3W (Ta), 2.8W (Tc) Surface Mount 1206-8 ChipFET™
Part Nnumber
SI5855CDC-T1-E3
Description
MOSFET P-CH 20V 3.7A 1206-8 P-Channel 20V 3.7A (Tc) 1.3W (Ta), 2.8W (Tc) Surface Mount 1206-8 ChipFET™
The product with part number SI5855CDC-T1-E3 (MOSFET P-CH 20V 3.7A 1206-8 P-Channel 20V 3.7A (Tc) 1.3W (Ta), 2.8W (Tc) Surface Mount 1206-8 ChipFET™)
is from company VISHAY SILICONIX and distributed with basic unit price 0,44 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 276pF @ 10V Vgs (Max) ±8V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.3W (Ta), 2.8W (Tc) Rds On (Max) @ Id, Vgs 144 mOhm @ 2.5A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 1206-8 ChipFET™ Package / Case 8-SMD, Flat Lead
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