SI4477DY-T1-GE3 VISHAY SILICONIX MOSFET,P CH,20V,26.6A,8-SOIC

Part Nnumber
SI4477DY-T1-GE3
Description
MOSFET,P CH,20V,26.6A,8-SOIC
Producer
VISHAY SILICONIX
Basic price
15,67 EUR

The product with part number SI4477DY-T1-GE3 (MOSFET,P CH,20V,26.6A,8-SOIC) is from company VISHAY SILICONIX and distributed with basic unit price 15,67 EUR. Minimal order quantity is 1 pc, Approx. production time is 19 weeks, Weight is 0.0005 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: -26.6A Drain Source Voltage Vds: -20V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0051ohm Operating Temperature Max: 150°C Power Dissipation Pd: 3W Rds(on) Test Voltage Vgs: -4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: -1.5V Transistor Case Style: SOIC Transistor Polarity: P Channel


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