SIA429DJT-T1-GE3 VISHAY SILICONIX MOSFET P-CH 20V 12A SC-70 P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

Part Nnumber
SIA429DJT-T1-GE3
Description
MOSFET P-CH 20V 12A SC-70 P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Producer
VISHAY SILICONIX
Basic price
0,54 EUR

The product with part number SIA429DJT-T1-GE3 (MOSFET P-CH 20V 12A SC-70 P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single) is from company VISHAY SILICONIX and distributed with basic unit price 0,54 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 8V Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs 20.5 mOhm @ 6A, 4.5V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6


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