SQJ844EP-T1-GE3 VISHAY SILICONIX MOSFET,NN CH,W DIODE,30V,8A,POPAK8L

Part Nnumber

SQJ844EP-T1-GE3

Description

MOSFET,NN CH,W DIODE,30V,8A,POPAK8L

Producer

VISHAY SILICONIX

Basic price

18,92 EUR

The product with part number SQJ844EP-T1-GE3 (MOSFET,NN CH,W DIODE,30V,8A,POPAK8L) is from company VISHAY SILICONIX and distributed with basic unit price 18,92 EUR. Minimal order quantity is 1 pc, Approx. production time is 28 weeks, Weight is 0.002 Kg, Custom Tariff 85412900, Origin China.

Continuous Drain Current Id: 8A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.02ohm Operating Temperature Max: 175°C Power Dissipation Pd: 48W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel

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