SQJ844EP-T1-GE3 VISHAY SILICONIX MOSFET,NN CH,W DIODE,30V,8A,POPAK8L

Part Nnumber
SQJ844EP-T1-GE3
Description
MOSFET,NN CH,W DIODE,30V,8A,POPAK8L
Producer
VISHAY SILICONIX
Basic price
18,92 EUR

The product with part number SQJ844EP-T1-GE3 (MOSFET,NN CH,W DIODE,30V,8A,POPAK8L) is from company VISHAY SILICONIX and distributed with basic unit price 18,92 EUR. Minimal order quantity is 1 pc, Approx. production time is 28 weeks, Weight is 0.002 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 8A Drain Source Voltage Vds: 30V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.02ohm Operating Temperature Max: 175°C Power Dissipation Pd: 48W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel


Following Parts
2433251XADanaher Controls1190,69 EUR
2433251XPDanaher Controls1187,69 EUR
FDD3706FAIRCHILD SEMICONDUCTOR11,02 EUR
DOD105155Dodge
DOD105167Dodge
AUIRFR2607ZINTERNATIONAL RECTIFIER13,75 EUR
DOD105168Dodge

Random Products
3038723Pheonix21,55 EUR
P6101Z1286000West Instruments
9510DC2155HEZBSiemens10024,23 EUR

(keyword SQJ844EP-T1-GE3 VISHAY SILICONIX MOSFET,NN CH,W DIODE,30V,8A,POPAK8L)
All Producents | VISHAY SILICONIX
© 2015 Industry Server