SI1912EDH-T1-E3 VISHAY SILICONIX MOSFET, NN CH, 20V, SOT363

Part Nnumber
SI1912EDH-T1-E3
Description
MOSFET, NN CH, 20V, SOT363
Producer
VISHAY SILICONIX
Basic price
10,59 EUR

The product with part number SI1912EDH-T1-E3 (MOSFET, NN CH, 20V, SOT363) is from company VISHAY SILICONIX and distributed with basic unit price 10,59 EUR. Minimal order quantity is 1 pc, Approx. production time is 36 weeks, Weight is 0.001 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 1.13A Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 6 On Resistance Rds(on): 0.22ohm Operating Temperature Max: 150°C Power Dissipation Pd: 570mW Rds(on) Test Voltage Vgs: 4.5V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 450mV Transistor Case Style: SOT-363 Transistor Polarity: Dual N Channel


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