Product Details for Material from VISHAY SILICONIX - SI7120DN-T1-GE3 - MOSFET, N, PPAK1212

SI7120DN-T1-GE3 VISHAY SILICONIX MOSFET, N, PPAK1212

Part Nnumber
SI7120DN-T1-GE3
Description
MOSFET, N, PPAK1212
Producer
VISHAY SILICONIX
Basic price
15,20 EUR

The product with part number SI7120DN-T1-GE3 (MOSFET, N, PPAK1212) is from company VISHAY SILICONIX and distributed with basic unit price 15,20 EUR. Minimal order quantity is 1 pc, Approx. production time is 34 weeks, Weight is 0.002 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 10A Drain Source Voltage Vds: 60V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.019ohm Operating Temperature Max: 150°C Power Dissipation Pd: 1.5W Rds(on) Test Voltage Vgs: 10V SVHC: No SVHC (16-Jun-2014) Threshold Voltage Vgs: 2.5V Transistor Case Style: PowerPAK 1212 Transistor Polarity: N Channel


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(keyword SI7120DN-T1-GE3 VISHAY SILICONIX MOSFET, N, PPAK1212)
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