SI2312BDS-T1-E3 VISHAY SILICONIX MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL

Part Nnumber
SI2312BDS-T1-E3
Description
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
Producer
VISHAY SILICONIX
Basic price
6,37 EUR

The product with part number SI2312BDS-T1-E3 (MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL) is from company VISHAY SILICONIX and distributed with basic unit price 6,37 EUR. Minimal order quantity is 3000 pc, Approx. production time is 28 weeks, Weight is 0 Kg, Custom Tariff 85412900, Origin Singapore.


Continuous Drain Current Id: 3.9A Drain Source Voltage Vds: 20V MSL: - No. of Pins: 3 On Resistance Rds(on): 0.025ohm Operating Temperature Max: 150°C Power Dissipation Pd: 750mW Rds(on) Test Voltage Vgs: 4.5V SVHC: To Be Advised Threshold Voltage Vgs: 850mV Transistor Case Style: SOT-23 Transistor Polarity: N Channel


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(keyword SI2312BDS-T1-E3 VISHAY SILICONIX MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL)
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