SIR800DP-T1-GE3 VISHAY SILICONIX MOSFET,N CH,DIODE,20V,50A,PPAKSO8

Part Nnumber
SIR800DP-T1-GE3
Description
MOSFET,N CH,DIODE,20V,50A,PPAKSO8
Producer
VISHAY SILICONIX
Basic price
19,39 EUR

The product with part number SIR800DP-T1-GE3 (MOSFET,N CH,DIODE,20V,50A,PPAKSO8) is from company VISHAY SILICONIX and distributed with basic unit price 19,39 EUR. Minimal order quantity is 1 pc, Approx. production time is 20 weeks, Weight is 0.002 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 50A Drain Source Voltage Vds: 20V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0019ohm Operating Temperature Max: 150°C Power Dissipation Pd: 5.2W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 600mV Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel


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