SI7852DP-T1-E3 VISHAY SILICONIX MOSFET N-CH 80V 7.6A PPAK SO-8 N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8

Part Nnumber
SI7852DP-T1-E3
Description
MOSFET N-CH 80V 7.6A PPAK SO-8 N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
Producer
VISHAY SILICONIX
Basic price
1,92 EUR

The product with part number SI7852DP-T1-E3 (MOSFET N-CH 80V 7.6A PPAK SO-8 N-Channel 80V 7.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8) is from company VISHAY SILICONIX and distributed with basic unit price 1,92 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Vgs(th) (Max) @ Id 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds - Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Rds On (Max) @ Id, Vgs 16.5 mOhm @ 10A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8


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