SIHB22N65E-GE3 VISHAY SILICONIX MOSFET, N CH, 650V, 22A, TO-263-3

Part Nnumber
SIHB22N65E-GE3
Description
MOSFET, N CH, 650V, 22A, TO-263-3
Producer
VISHAY SILICONIX
Basic price
13,41 EUR

The product with part number SIHB22N65E-GE3 (MOSFET, N CH, 650V, 22A, TO-263-3) is from company VISHAY SILICONIX and distributed with basic unit price 13,41 EUR. Minimal order quantity is 1 pc, Approx. production time is 28 weeks, Weight is 0.0014 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 22A Drain Source Voltage Vds: 650V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.15ohm Operating Temperature Max: 150°C Power Dissipation Pd: 227W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: - Transistor Case Style: TO-263 Transistor Polarity: N Channel


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