2N7002-T1-GE3 VISHAY SILICONIX MOSFET N-CH 60V 115MA SOT23 N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Part Nnumber

2N7002-T1-GE3

Description

MOSFET N-CH 60V 115MA SOT23 N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236

Producer

VISHAY SILICONIX

Basic price

0,36 EUR

The product with part number 2N7002-T1-GE3 (MOSFET N-CH 60V 115MA SOT23 N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount TO-236) is from company VISHAY SILICONIX and distributed with basic unit price 0,36 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.

Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 200mW (Ta) Rds On (Max) @ Id, Vgs 7.5 Ohm @ 500mA, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3

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