IRFBC40PBF VISHAY SILICONIX MOSFET N-CH 600V 6.2A TO-220AB N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB

Part Nnumber
IRFBC40PBF
Description
MOSFET N-CH 600V 6.2A TO-220AB N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB
Producer
VISHAY SILICONIX
Basic price
1,75 EUR

The product with part number IRFBC40PBF (MOSFET N-CH 600V 6.2A TO-220AB N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB) is from company VISHAY SILICONIX and distributed with basic unit price 1,75 EUR. Minimal order quantity is 50 pc, Approx. production time is 77 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 125W (Tc) Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.7A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3


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