SIHP22N60E-GE3 VISHAY SILICONIX MOSFET N-CH 600V 21A TO220AB N-Channel 600V 21A (Tc) 227W (Tc) Through Hole
Part Nnumber
SIHP22N60E-GE3
Description
MOSFET N-CH 600V 21A TO220AB N-Channel 600V 21A (Tc) 227W (Tc) Through Hole
The product with part number SIHP22N60E-GE3 (MOSFET N-CH 600V 21A TO220AB N-Channel 600V 21A (Tc) 227W (Tc) Through Hole)
is from company VISHAY SILICONIX and distributed with basic unit price 4,33 EUR. Minimal order quantity is 1 pc, Approx. production time is 133 weeks.
Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series E Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V Vgs (Max) ±30V FET Feature - Power Dissipation (Max) 227W (Tc) Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3
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