SIHD12N50E-GE3 VISHAY SILICONIX MOSFET, N-CH, 500V, 10.5A, TO-252-3

Part Nnumber
SIHD12N50E-GE3
Description
MOSFET, N-CH, 500V, 10.5A, TO-252-3
Producer
VISHAY SILICONIX
Basic price
4,63 EUR

The product with part number SIHD12N50E-GE3 (MOSFET, N-CH, 500V, 10.5A, TO-252-3) is from company VISHAY SILICONIX and distributed with basic unit price 4,63 EUR. Minimal order quantity is 1 pc, Weight is 0.02 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 10.5A Drain Source Voltage Vds: 500V MSL: MSL 1 - Unlimited No. of Pins: 3 On Resistance Rds(on): 0.33ohm Operating Temperature Max: 150°C Power Dissipation Pd: 114W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 4V Transistor Case Style: TO-252 Transistor Polarity: N Channel


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