SQJ886EP-T1-GE3 VISHAY SILICONIX MOSFET, N-CH, 40V, 60A, PPAKSO8L

Part Nnumber
SQJ886EP-T1-GE3
Description
MOSFET, N-CH, 40V, 60A, PPAKSO8L
Producer
VISHAY SILICONIX
Basic price
15,21 EUR

The product with part number SQJ886EP-T1-GE3 (MOSFET, N-CH, 40V, 60A, PPAKSO8L) is from company VISHAY SILICONIX and distributed with basic unit price 15,21 EUR. Minimal order quantity is 1 pc, Approx. production time is 18 weeks, Weight is 0.002 Kg, Custom Tariff 85412900, Origin China.


Continuous Drain Current Id: 60A Drain Source Voltage Vds: 40V MSL: MSL 1 - Unlimited No. of Pins: 8 On Resistance Rds(on): 0.0036ohm Operating Temperature Max: 175°C Power Dissipation Pd: 55W Rds(on) Test Voltage Vgs: 10V SVHC: To Be Advised Threshold Voltage Vgs: 2V Transistor Case Style: PowerPAK SO Transistor Polarity: N Channel


Following Parts
MQDEC2430RABanner Engineering39,77 EUR
MQDEC2430Banner Engineering34,77 EUR
MQDEC2530RABanner Engineering39,77 EUR
MQDEC2530Banner Engineering39,77 EUR
MQDEC420RRBanner Engineering36,77 EUR
IRF2204PBFINTERNATIONAL RECTIFIER13,00 EUR
MQDEC420SRBanner Engineering39,77 EUR

Random Products
1031540012Eaton Corporation362,54 EUR
20357101501VARTA2,78 EUR
4936SS28100Parker Hydraulic Motor Div311,38 EUR

(keyword SQJ886EP-T1-GE3 VISHAY SILICONIX MOSFET, N-CH, 40V, 60A, PPAKSO8L)
All Producents | VISHAY SILICONIX
© 2015 Industry Server