SIS406DN-T1-GE3 VISHAY SILICONIX MOSFET N-CH 30V 9A 1212-8 PPAK N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Part Nnumber
SIS406DN-T1-GE3
Description
MOSFET N-CH 30V 9A 1212-8 PPAK N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
Producer
VISHAY SILICONIX
Basic price
0,75 EUR

The product with part number SIS406DN-T1-GE3 (MOSFET N-CH 30V 9A 1212-8 PPAK N-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8) is from company VISHAY SILICONIX and distributed with basic unit price 0,75 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 15V Vgs (Max) ±25V FET Feature - Power Dissipation (Max) 1.5W (Ta) Rds On (Max) @ Id, Vgs 11 mOhm @ 12A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8


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