Product Details for Material from VISHAY SILICONIX - SI4620DY-T1-GE3 - MOSFET N-CH 30V 6A 8-SOIC N-Channel 30V 6A (Ta), 7.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO

SI4620DY-T1-GE3 VISHAY SILICONIX MOSFET N-CH 30V 6A 8-SOIC N-Channel 30V 6A (Ta), 7.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO

Part Nnumber
SI4620DY-T1-GE3
Description
MOSFET N-CH 30V 6A 8-SOIC N-Channel 30V 6A (Ta), 7.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO
Producer
VISHAY SILICONIX
Basic price
0,53 EUR

The product with part number SI4620DY-T1-GE3 (MOSFET N-CH 30V 6A 8-SOIC N-Channel 30V 6A (Ta), 7.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO) is from company VISHAY SILICONIX and distributed with basic unit price 0,53 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series LITTLE FOOT® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 15V Vgs (Max) ±20V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs 35 mOhm @ 6A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)


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