SI4166DY-T1-GE3 VISHAY SILICONIX MOSFET N-CH 30V 30.5A 8-SOIC N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SO

Part Nnumber
SI4166DY-T1-GE3
Description
MOSFET N-CH 30V 30.5A 8-SOIC N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SO
Producer
VISHAY SILICONIX
Basic price
1,26 EUR

The product with part number SI4166DY-T1-GE3 (MOSFET N-CH 30V 30.5A 8-SOIC N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SO) is from company VISHAY SILICONIX and distributed with basic unit price 1,26 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Digi-Reel® Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2730pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 3W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs 3.9 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)


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