SQ2310ES-T1_GE3 VISHAY SILICONIX MOSFET N-CH 20V 6A SOT23 N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236

Part Nnumber

SQ2310ES-T1_GE3

Description

MOSFET N-CH 20V 6A SOT23 N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236

Producer

VISHAY SILICONIX

Basic price

0,61 EUR

The product with part number SQ2310ES-T1_GE3 (MOSFET N-CH 20V 6A SOT23 N-Channel 20V 6A (Tc) 2W (Tc) Surface Mount TO-236) is from company VISHAY SILICONIX and distributed with basic unit price 0,61 EUR. Minimal order quantity is 1 pc, Approx. production time is 98 weeks.

Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 485pF @ 10V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 2W (Tc) Rds On (Max) @ Id, Vgs 30 mOhm @ 5A, 4.5V Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3

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