SI5435BDC-T1-GE3 VISHAY SILICONIX MOSFET 30V 5.9A 2.5W 45mohm @ 10V

Part Nnumber
SI5435BDC-T1-GE3
Description
MOSFET 30V 5.9A 2.5W 45mohm @ 10V
Producer
VISHAY SILICONIX
Basic price
1,02 EUR

The product with part number SI5435BDC-T1-GE3 (MOSFET 30V 5.9A 2.5W 45mohm @ 10V) is from company VISHAY SILICONIX and distributed with basic unit price 1,02 EUR. Minimal order quantity is 1 pc.


Vishay Product Category: MOSFET RoHS:  Details Brand: Vishay / Siliconix Id - Continuous Drain Current: 4.3 A Vds - Drain-Source Breakdown Voltage: - 30 V Rds On - Drain-Source Resistance: 45 mOhms Transistor Polarity: P-Channel Vgs - Gate-Source Breakdown Voltage: 20 V Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.3 W Mounting Style: SMD/SMT Package/Case: ChipFET-8 Packaging: Reel Channel Mode: Enhancement Configuration: Single Fall Time: 12 ns Minimum Operating Temperature: - 55 C Rise Time: 12 ns Factory Pack Quantity: 3000 Typical Turn-Off Delay Time: 32 ns Part # Aliases: SI5435BDC-GE3


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