SI4922BDY-T1-E3 VISHAY SILICONIX MOSFET 2N-CH 30V 8A 8-SOIC Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO

Part Nnumber
SI4922BDY-T1-E3
Description
MOSFET 2N-CH 30V 8A 8-SOIC Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO
Producer
VISHAY SILICONIX
Basic price
1,24 EUR

The product with part number SI4922BDY-T1-E3 (MOSFET 2N-CH 30V 8A 8-SOIC Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SO) is from company VISHAY SILICONIX and distributed with basic unit price 1,24 EUR. Minimal order quantity is 1 pc, Approx. production time is 105 weeks.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8A Rds On (Max) @ Id, Vgs 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 15V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO


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